si9802dy vishay siliconix document number: 70625 s-51303erev. a, 19-dec-96 www.vishay.com faxback 408-970-5600 1 dual n-channel reduced qg, fast switching mosfet
v ds (v) r ds(on) ( ) i d (a) 20 0.055 @ v gs = 4.5 v 4.5 20 0.075 @ v gs = 3.0 v 3.8 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 n-channel mosfet d 1 d 1 g 1 s 1 n-channel mosfet d 2 d 2 g 2 s 2
parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current (t j = 150 c) a t a = 25 c i d 4.5 a continuous drain current (t j = 150 c) a t a = 70 c i d 3.6 a pulsed drain current (10 s pulse width) i dm 25 a continuous source current (diode conduction) a i s 1.7 maximum power dissipation a t a = 25 c p d 2 w maximum power dissipation a t a = 70 c p d 1.3 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 62.5 c/w notes a. surface mounted on fr4 board, t 10 sec.
si9802dy vishay siliconix www.vishay.com faxback 408-970-5600 2 document number: 70625 s-51303erev. a, 19-dec-96
parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 70 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 5 v 25 a drain source on state resistance a r ds( ) v gs = 4.5 v, i d = 4.5 a 0.044 0.055 drain-source on-state resistance a r ds(on) v gs = 3.0 v, i d = 3.8 a 0.055 0.075 forward transconductance a g fs v ds = 10 v, i d = 4.5 a 11.5 s diode forward voltage a v sd i s =1.7 a, v gs = 0 v 0.73 1.2 v dynamic b total gate charge q g v10vv45vi45a 5.5 10 c gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 4.5 a 1.2 nc gate-drain charge q gd 1.5 turn-on delay time t d(on) v10vr10 12 25 rise time t r v dd = 10 v, r l = 10 i1av 45vr6 30 60 turn-off delay time t d(off) dd , l i d 1 a, v gen = 4.5 v, r g = 6 23 50 ns fall time t f 9 20 source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s 60 100 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
si9802dy vishay siliconix document number: 70625 s-51303erev. a, 19-dec-96 www.vishay.com faxback 408-970-5600 3
0 5 10 15 20 25 0246810 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0123456 0 0.4 0.8 1.2 1.6 2.0 50 0 50 100 150 0 0.05 0.10 0.15 0.20 0.25 0.30 0 5 10 15 20 25 0 300 600 900 1200 0 4 8 12 16 20 0 5 10 15 20 25 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 125 c c rss c oss c iss v gs = 4.5 v t c = 55 c v ds = 10 v i d = 4.5 a v gs = 4.5 v i d = 4.5 a v gs = 5 thru 3.5 v 2.5 v 3 v 25 c v gs = 3 v 2 v 1.5 v
si9802dy vishay siliconix www.vishay.com faxback 408-970-5600 4 document number: 70625 s-51303erev. a, 19-dec-96
source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) power (w) 0.8 0.6 0.4 0.2 0.0 0.2 0.4 50 0 50 100 150 0 0.03 0.06 0.09 0.12 0.15 02468 t j = 150 c t j = 25 c 2 1 0.1 0.01 i d = 4.5 a i d = 250 a 0 0.4 10 0.8 1.2 1.4 1 10 3 10 2 11030 10 1 10 4 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.01 0 0.1 40 50 10 20 30 11030 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 30 variance (v) v gs(th) 0.2 0.6 1.0
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